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| SSM6L05FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications Unit: mm * * * Small package Low on resistance Q1: Ron = 0.8 (max) (@VGS = 4 V) Q2: Ron = 3.3 (max) (@VGS = -4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 12 400 800 Unit V V mA Q2 Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating -20 12 -200 -400 Unit V V mA JEDEC JEITA TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25C) Characteristics Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 300 150 -55~150 Unit mW C C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.32 mm x 6) 1 2007-11-01 SSM6L05FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 K4 1 2 3 1 Q1 Q2 2 3 Q1 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff VDD = 3 V, ID = 100 mA, VGS = 0~2.5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 200 mA ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 2.5 V (Note2) (Note2) (Note2) Min 20 0.6 350 Typ. 0.6 0.85 22 9 21 60 70 Max 1 1 1.1 0.8 1.2 Unit A V A V mS pF pF pF ns Note2: Pulse test Switching Time Test Circuit (Q1: Nch MOS FET) (a) Test circuit 2.5 V 0 10 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C OUT IN 50 RL VDD 0V 10% (b) VIN 2.5 V 90% (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) 2 2007-11-01 SSM6L05FU Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. Q2 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff VDD = -3 V, ID = -50 mA, VGS = 0~-2.5 V VDS = -3 V, VGS = 0, f = 1 MHz Test Condition VGS = 12 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -50 mA (Note2) Min -20 -0.6 100 Typ. 2.1 3.2 27 7 21 70 70 Max 1 -1 -1.1 3.3 4.0 Unit A V A V mS pF pF pF ns ID = -100 mA, VGS = -4 V (Note2) ID = -50 mA, VGS = -2.5 V (Note2) Note2: Pulse test Switching Time Test Circuit (Q2: Pch MOS FET) (a) Test circuit 0 -2.5 V 10 s VDD = -3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C OUT IN 50 RL VDD -2.5 V (b) VIN 0V 10% 90% (c) VOUT VDS (ON) 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 3 2007-11-01 SSM6L05FU Q1 (Nch MOS FET) ID - VDS 1000 Common Source 800 10 4 3 2.5 2.3 Ta = 25C 100 1000 Common Source VDS = 3 V ID - VGS (mA) (mA) Drain current ID 2.1 10 Drain current ID 600 Ta = 100C 400 1.9 1 25C -25C 0.1 1.7 200 VGS = 1.5 V 0 0 0.5 1.0 1.5 2.0 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 2.0 Common Source Ta = 25C 1.6 1.6 2.0 RDS (ON) - VGS Common Source ID = 200 mA Drain-Source on resistance RDS (ON) () 1.2 2.5 V 0.8 VGS = 4 V Drain-Source on resistance RDS (ON) () 1.2 0.8 Ta = 100C 25C 0.4 -25C 0.4 0 0 200 400 600 800 1000 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) - Ta 2.0 Yfs - ID Forward transfer admittance Yfs (mS) 5000 Common Source 3000 VDS = 3 V Ta = 25C Common Source ID = 200 mA 1.6 Drain-Source on resistance RDS (ON) () 1.2 2.5 V 1000 0.8 VGS = 4 V 0.4 500 300 0 -25 0 25 50 75 100 125 150 100 10 30 50 100 300 500 1000 Ambient temperature Ta (C) Drain current ID (mA) 4 2007-11-01 SSM6L05FU Q1 (Nch MOS FET) IDR - VDS 1000 Common Source VGS = 0 800 Ta = 25C D 600 G IDR S 100 50 30 C - VDS Drain reverse current IDR (mA) (pF) Ciss 10 5 3 Common Source VGS = 0 f = 1 MHz Ta = 25C 1 0.1 0.3 1 3 10 30 Crss Capacitance C Coss 400 200 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Drain-Source voltage VDS (V) Drain-Source voltage VDS (V) t - ID 1000 Common Source 500 VDD = 3 V toff VGS = 0~2.5 V Ta = 25C tf Switching time t (ns) 300 100 50 30 ton tr 10 1 3 10 30 100 300 Drain current ID (mA) 5 2007-11-01 SSM6L05FU Q2 (Pch MOS FET) ID - VDS -500 Common Source Ta = 25C -10 -300 -4 -3 -2.5 -2.3 -2.1 -200 -1.9 -1.7 VGS = -1.5 V 0 0 -0.01 0 -1000 Common Source VDS = -3 V -100 ID - VGS -400 (mA) (mA) Drain current ID -10 Ta = 100C -1 25C -0.1 -25C -2.0 Drain current ID -100 -0.5 -1.0 -1.5 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 6 Common Source Ta = 25C 5 5 -2.5 V 6 RDS (ON) - VGS Common Source ID = -50 mA Drain-Source on resistance RDS (ON) () 4 Drain-Source on resistance RDS (ON) () 4 3 VGS = -4 V 2 3 Ta = 100C 2 25C 1 1 -25C 0 0 -100 -200 -300 -400 -500 0 0 -2 -4 -6 -8 -10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) - Ta 6 Common Source 5 1000 Yfs - ID Common Source VDS = -3 V 500 Ta = 25C 300 Drain-Source on resistance RDS (ON) () 4 -2.5 V, -50 mA 3 2 VGS = -4 V, ID = -100 mA Forward transfer admittance Yfs (mS) 100 1 50 30 -10 0 -25 0 25 50 75 100 125 150 -30 -50 -100 -300 -500 -1000 Ambient temperature Ta (C) Drain current ID (mA) 6 2007-11-01 SSM6L05FU Q2 (Pch MOS FET) IDR - VDS -500 Common Source VGS = 0 100 50 C - VDS Drain reverse current IDR (mA) (pF) -400 Ta = 25C D 30 Ciss Coss -300 G IDR S Capacitance C 10 5 3 Common Source VGS = 0 f = 1 MHz Ta = 25C 1 -0.1 -0.3 -1 -3 -10 -30 Crss -200 -100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-Source voltage VDS (V) Drain-Source voltage VDS (V) t - ID 1000 Common Source 500 toff VGS = 0~-2.5 V Ta = 25C 400 PD* - Ta Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 t 2 Cu Pad: 0.32 mm x 6) 300 Switching time t (ns) 300 100 50 30 tf ton tr Drain power dissipation PD* -300 (mW) 200 100 VDD = -3 V 10 -1 -3 -10 -30 -100 Drain current ID (mA) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) *: Total rating 7 2007-11-01 SSM6L05FU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-11-01 |
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